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IXFA4N100P
IXFP4N100P
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
TO-220 (IXFP) Outline
g fs
R Gi
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
V DS = 20V, I D = 0.5 ? I D25 , Note 1
Gate Input Resistance
V GS = 0V, V DS = 25V, f = 1MHz
Resistive Switching Times
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
R G = 5 Ω (External)
1.8
3.0
1.6
1456
90
16
24
36
37
50
S
Ω
pF
pF
pF
ns
ns
ns
ns
Q g(on)
Q gs
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
26
9
nC
nC
Pins:
1 - Gate
2 - Drain
Q gd
R thJC
12
nC
0.83 ° C/W
R thCS
TO-220
0.50
° C/W
Source-Drain Diode
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
I S
V GS = 0V
4
A
I SM
V SD
Repetitive, Pulse Width Limited by T JM
I F = I S , V GS = 0V, Note 1
16
1.3
A
V
TO-263 (IXFA) Outline
t rr
I RM
Q RM
I F = 2A, V GS = 0V, -di/dt = 100A/ μ s
V R = 100V
5.30
0.34
300
ns
A
μ C
Note 1: Pulse test, t ≤ 300 μ s, duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065B1
6,683,344
6,727,585 7,005,734B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
4,881,106
5,017,508
5,034,796
5,063,307
5,187,117
5,381,025
5,486,715
6,259,123B1
6,306,728B1
6,534,343
6,583,505
6,710,405B2
6,710,463
6,759,692 7,063,975B2
6,771,478B2 7,071,537
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